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TYPICAL PERFORMANCE CURVES (R)
APT35GP120JDQ2 1200V
APT35GP120JDQ2
POWER MOS 7 IGBT
(R)
E G C
E
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * RBSOA Rated
S
OT
22
7
ISOTOP (R)
"UL Recognized"
file # E145592
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT35GP120JDQ2 UNIT Volts
1200 30 64 26 140 140A @ 960V 284 -55 to 150 300
Amps
Reverse Bias Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units
1200 3 4.5 3.3 3 350
2 2
6 3.9
Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
Volts
I CES I GES
Gate-Emitter Leakage Current (VGE = 20V)
100
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-7631
APT Website - http://www.advancedpower.com
Rev A
11-2005
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C)
A
3000
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc RBSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT35GP120JDQ2
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 35A TJ = 150C, R G = 4.3, VGE = 15V, L = 100H,VCE = 960V Inductive Switching (25C) VCC = 600V VGE = 15V RG = 4.3 I C = 35A VGE = 15V MIN TYP MAX UNIT pF V nC
3240 250 31 7.5 150 21 60 140 16 20 95 40 750 1305 680 16 20 145 75 750 2130 1745 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Reverse Bias Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC = 600V VGE = 15V RG = 4.3 I C = 35A
J
Turn-on Switching Energy (Diode)
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT VIsolation Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 MIN TYP MAX UNIT C/W gm Volts
.44 1.10 29.2
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained h
050-7631
Rev A
11-2005
TYPICAL PERFORMANCE CURVES
80 70 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 60 50 40 30 20 10 0
80 70 60 50 40 30 20 10 0
APT35GP120JDQ2
TJ = 25C
TJ = 25C
TJ = 125C
TJ = 125C
120 100
FIGURE 1, Output Characteristics(TJ = 25C)
250s PULSE TEST<0.5 % DUTY CYCLE
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 35A C T = 25C
J
0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
VCE = 240V VCE = 600V
80 TJ = -55C 60 TJ = 25C 40 TJ = 125C 20 0
8 6 4 2 0
VCE = 960V
0
234 56 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
1
0
20
40 60 80 100 120 140 160 GATE CHARGE (nC) FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6 5 4
5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 70A IC = 35A
IC = 70A IC = 35A
3 2 1 0
IC = 17.5A
IC = 17.5A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.20
6
25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature
90
0
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50
80 70 60 50 40 30 20 10 11-2005 050-7631 Rev A
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
0 -50
25 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
180 160 140 120 100 80 60 40
VCE = 600V 20 RG = 4.3 VGE =15V,TJ=125C
APT35GP120JDQ2
20 VGE = 15V 15
10
VGE =15V,TJ=25C
5 VCE = 600V
80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
50
RG = 4.3, L = 100H, VCE = 600V
0
TJ = 25C or 125C RG = 4.3 L = 100H
80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
100 90 80 tf, FALL TIME (ns) 70 60 50 40 30 20 10
TJ = 25C, VGE = 15V
0
L = 100H
RG = 4.3, L = 100H, VCE = 600V
40 tr, RISE TIME (ns)
TJ = 125C, VGE = 15V
30
20
TJ = 25 or 125C,VGE = 15V
10
80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
5000 EON2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J)
V = 600V CE V = +15V GE R = 4.3
G
0
80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
4000 3500 3000 2500 2000 1500 1000 500 0
TJ = 25C
= 600V V CE = +15V V GE R = 4.3
G
0
4000
TJ = 125C
TJ = 125C
3000
2000
1000
TJ = 25C
80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
8000 SWITCHING ENERGY LOSSES (J) 7000 6000 5000 4000 3000 2000 1000
Eoff,35A Eoff,17.5A Eon2,35A Eoff,70A
= 600V V CE = +15V V GE T = 125C
J
0
80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
5000 SWITCHING ENERGY LOSSES (J)
= 600V V CE = +15V V GE R = 4.3
G
Eon2,70A
Eon2,70A
4000
3000
Eoff,70A Eon2,35A
2000
11-2005
Eon2,17.5A
1000
Eoff,35A
Eon2,17.5A
Rev A
050-7631
50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0
0
125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0
0
Eoff,17.5A
TYPICAL PERFORMANCE CURVES
10,000 Cies C, CAPACITANCE ( F) IC, COLLECTOR CURRENT (A)
160 140 120 100 80 60 40 20
APT35GP120JDQ2
1,000 500 Coes 100 50 Cres 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
P
0 100 200 300 400 500 600 700 800 900 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.45 0.40 ZJC, THERMAL IMPEDANCE (C/W) 0.35 0.30 0.25 0.20 0.15 0.10 0.5 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.3 0.7 D = 0.9
0.5
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
100
RC MODEL Junction temp. ( C) 0.0966 0.00997
FMAX, OPERATING FREQUENCY (kHz)
50
F
Power (Watts)
0.228
0.158
10
T = 125C J T = 75C C D = 50 % V = 800V CE R = 5
G
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
0.116 Case temperature
1.958
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
20 30 40 50 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
3
5
050-7631
Rev A
11-2005
APT35GP120JDQ2
Gate Voltage 10%
APT30DQ120
tr
t d(on)
TJ = 125 C
V CC
IC
V CE
10%
90% Collector Current 5% 5% Collector Voltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
t d(off)
90%
Gate Voltage
T J = 125 C
tf
Collector Voltage 10%
0 Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
050-7631
Rev A
11-2005
TYPICAL PERFORMANCE CURVES
APT35GP120JDQ2
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 89C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 35A Forward Voltage IF = 70A IF = 35A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT35GP120JDQ2 UNIT Amps
30 39 210
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.73 3.41 1.93
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM
ZJC, THERMAL IMPEDANCE (C/W)
Characteristic
Test Conditions
Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.20 1.00 0.80 0.60 0.40 0.20 0 D = 0.9
25 300 360 4 380 1700 8 160 2550 28 -
IF = 30A, diF/dt = -200A/s VR = 800V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 30A, diF/dt = -200A/s VR = 800V, TC = 125C
IF = 30A, diF/dt = -1000A/s VR = 800V, TC = 125C
0.7
0.5 0.3 0.1 0.05 10-5 10-4
Note:
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp (C) 0.219 0.00306
0.468
0.0463
Case temperature (C)
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7631
0.341
0.267
Rev A
Power (watts)
11-2005
100 trr, REVERSE RECOVERY TIME (ns) 90 IF, FORWARD CURRENT (A) 80 70 60 50 40 30 20 10 0 0 TJ = 125C TJ = -55C TJ = 175C TJ = 25C
450 400 350 300 250 200 150 100 50 30A 60A
APT35GP120JDQ2
T = 125C J V = 800V
R
15A
1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage
T = 125C J V = 800V
R
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 30 25 20 15 10
T = 125C J V = 800V
R
0
4000 Qrr, REVERSE RECOVERY CHARGE (nC) 3500 3000 2500 2000 1500 1000 500 0
60A
60A
30A
30A
15A
15A
5 0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 trr 0.8 0.6 0.4 0.2 0.0 trr Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 45 40 35 30 IF(AV) (A) 25 20 15 10 5
Duty cycle = 0.5 T = 175C
J
IRRM
Qrr
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature
200 CJ, JUNCTION CAPACITANCE (pF)
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
150
100
11-2005
50
Rev A
050-7631
10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage
0
1
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT10035LLL
APT35GP120JDQ2
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
11-2005 050-7631 Rev A
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode Dimensions in Millimeters and (Inches)
Gate
ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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